Anisotropic screening of excitons in van der Waals materials
學年 113
學期 2
出版（發表）日期 2025-05-12
作品名稱 Anisotropic screening of excitons in van der Waals materials
作品名稱（其他語言）
著者 Hsu, Chih-en; Lee, Chi-cheng
單位
出版者
著錄名稱、卷期、頁數 npj 2D Materials and Applications 9,　37
摘要 Van der Waals (vdW) materials exhibit optical anisotropy due to the fundamental difference between in-plane (IP) covalent bonds and out-of-plane (OP) vdW bonds. In particular, InSe, a vdW material, provides an excellent platform for studying the optical properties of anisotropic excitons. We measure the energy difference between excitons with IP and OP dipole responses in InSe to be 0.4 meV. Under photoexcitation with femtosecond pulses, the photocarriers screen the excitons and can increase the energy difference between IP and OP optical responses to as much as 8 meV. This energy difference results from the varying screening lengths along the IP and OP directions. The change in energy difference persists for over 100 ps at 77 K, but recovers much faster, within 100 ps, at room temperature. The dependence of carrier density on the anisotropic screening of excitons has also been investigated.
關鍵字
語言 en
ISSN 2397-7132
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 GBR
公開徵稿
出版型式 ,電子版
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