Applying the selective Cu electroplating technique to light-emitting diodes | |
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學年 | 102 |
學期 | 2 |
出版(發表)日期 | 2014-07-01 |
作品名稱 | Applying the selective Cu electroplating technique to light-emitting diodes |
作品名稱(其他語言) | |
著者 | Hsu, Shih-Chieh; Chen, Lo-Lin; Lin, Cheng-Lan; Lin, Dar-Jong |
單位 | 淡江大學化學工程與材料工程學系 |
出版者 | Dordrecht: Springer Netherlands |
著錄名稱、卷期、頁數 | Research on Chemical Intermediates 40(6), pp.2347-2354 |
摘要 | We successfully fabricated a predefined patterned copper (Cu) substrate for thin GaN light-emitting diodes without barriers by the selective electroplating technique. The contours of Cu bumps fabricated using different electroplating modes and parameters were measured. We observed that the average thickness diminished with increasing current density. The current density conditions to obtain the best upright structure in the process were 40 and 80 mA/cm2. |
關鍵字 | Electroplating; Selective electroplating; LED; GaN
 Cu bump |
語言 | en |
ISSN | 0922-6168 |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | Lin, Cheng-Lan |
審稿制度 | 是 |
國別 | NLD |
公開徵稿 | |
出版型式 | 紙本,電子版 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/99713 ) |