| Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model | |
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| 學年 | 114 |
| 學期 | 2 |
| 出版(發表)日期 | 2026-07-17 |
| 作品名稱 | Mathematical expressions of germanium conduction band: Solved using anti-bond orbital model |
| 作品名稱(其他語言) | |
| 著者 | Chun-Nan Chen; Win-Jet Luo; Prateek Negi; Bivas Panigrahi |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 140, p. 035703 |
| 摘要 | The formation of α(=s,x,y,z)-like anti-bond orbitals (ABOs) is explained in detail: from atomic orbitals, 〖sp〗^3 tetragonal hybrid orbitals, 〖sp〗^3 tetragonal antibonding orbitals, and finally α-like ABOs. The mathematical formulas for ABO Hamiltonian matrix are derived in detail and illustrated with diagrams. The ABO model is used to explore the conduction band of germanium (Ge). Therefore, the mathematical expressions for its s-, x-, y-, z-like bands and the ABO composition ratios of each band are obtained. The single-band k-dependent effective mass equation for the conduction band of Ge is presented, and it must be emphasized that the electron effective mass of Ge is related to the electron wave vector (k). Therefore, this k-dependent effective mass equation is well-suited for computer simulations of advanced Ge-based nano-electronic devices under conditions of higher electron energies. |
| 關鍵字 | Germanium; k-dependent effective mass; 〖sp〗^3 tetragonal antibonding orbital; Orbital composition ratio; Effective mass equation; Anti-bond orbital model |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/129784 ) |
| SDGS | 優質教育,產業創新與基礎設施 |