Regulation of oxygen vacancies by gamma-irradiation in BiVO4 thin films and their electrochemical performance
學年 113
學期 2
出版（發表）日期 2025-06-01
作品名稱 Regulation of oxygen vacancies by gamma-irradiation in BiVO4 thin films and their electrochemical performance
作品名稱（其他語言）
著者 Shilpa Chauhan; Anshu Singh; Richa Saini; Logu Thirumalaisamy; Jayaraman Ramakrishnan; Thanigai Arul Kumaravelu; Thangavel Rajalingam; Chung-Li Dong; Asokan Kandasami
單位
出版者
著錄名稱、卷期、頁數 Ceramics International 51(14), p.19211-19221
摘要 Previous studies have established that bismuth vanadate BiVO4 (BVO) and its composites possess remarkable potential in radiation shielding, photocatalysis, and photovoltaics. This study focuses on the effects of gamma irradiation on the structural, optical, and electrical properties of BVO and its electrochemical performance for applications in advanced energy and environmental technologies. The spray-coated BVO thin films were irradiated by gamma rays with varying doses: 0, 50, 100, and 150 kGy. These thin films were characterized using Grazing Incidence X-ray diffraction (GIXRD), Raman, UV–vis, and Photoluminescence (PL) spectroscopic techniques. The GIXRD patterns confirm the reduction of crystallinity of thin films and no change in the monoclinic scheelite phase after γ-irradiation. These results show the phase stability of thin films after γ irradiation. The alteration of local atomic structure is confirmed by Raman spectroscopy. Morphological images showed shrinkage of cluster structure formation after γ irradiation. The band gap reduces from 2.54 to 2.26 eV after γ irradiation at 150 kGy due to the creation of defects and the reduction of bond length of V-O ions. In addition to this, PL measurements illustrated a high-defect concentration up to 100 kGy which shows a reduction at 150 kGy. This is attributed to the localized heating effect. PL data implies defect creation and annihilation after γ-irradiation is directly correlated with the structural, XPS, and Raman results. On irradiation, cyclic voltammetry (CV) is enhanced at a higher dose than the other films and demonstrated structurally stable thin film even after 1000 cycles. These analytical results disclose that gamma irradiation tunes the optical band gap of the BVO thin films and exhibits better electrochemical performance.
關鍵字 Bismuth vanadate; γ-irradiation; Oxygen vacancies; Electrochemical performance
語言 en
ISSN 1873-3956; 0272-8842
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 GBR
公開徵稿
出版型式 ,電子版,紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/129552 )