Sapphire/silicon-substrate dependent magnetism of Er-substituted ZnO (ZnO: Er) thin film: x-ray absorption near edge structure (XANES) study
學年 114
學期 1
出版（發表）日期 2025-11-20
作品名稱 Sapphire/silicon-substrate dependent magnetism of Er-substituted ZnO (ZnO: Er) thin film: x-ray absorption near edge structure (XANES) study
作品名稱（其他語言）
著者 Shivani Das; Kuan-Hung Chen; Tapaswini Chhotaray; Wei-Xuan Lin; Surajit Ghosh; Dilip Kumar Mishra; Sekhar Chandra Ray; Way-Faung Pong
單位
出版者
著錄名稱、卷期、頁數 Scientific Reports 15(1), 41086
摘要 Hexagonal wurtzite structure Er-substituted ZnO dilute magnetic semiconductors (DMSs) thin films have been deposited on sapphire/silicon substrate [(ZnO: Er)sapphire/silicon] using DC sputtering technique at room temperature in oxygen-plasma atmosphere and studied their electronic/local atomic-structure and correlated with their magnetic behaviors. Incorporation of Er+3-ion in ZnO-lattice [(ZnO: Er)sapphire/silicon] and formation of Zn+2/O− vacancies (VZn/V0) at the bonding between Zn and O2 may induces room temperature ferromagnetism. Magnetic M-H loops of pure-ZnO shows diamagnetic behaviour, whereas (ZnO: Er)sapphire/silicon are ferromagnetic in nature. Moreover, (ZnO: Er)sapphire is higher ferromagnetic (saturation magnetization, MS ≈2.3 emu/g, coercivity, HC ≈63 Oe) than (ZnO: Er)silicon (MS ≈0.5 emu/g, HC ≈15 Oe). Incorporation of Er+3-ion and formation of VZn/V0 vacancies were observed from x-ray photoelectron spectroscopy (XPS) and x-ray absorption near edge structure (XANES) spectroscopy analysis. The peak positions of Zn 3p and O 1s in XPS spectrum of (ZnO: Er)sapphire/silicon thin films are shifted at higher energy levels compared to pure ZnO, indicating that the behaviors of (ZnO: Er)sapphire/silicon thin films are substrate dependent. XANES study of Zn K-edge/Zn L3-edge shows the transition of Zn 1s →4p / Zn 2p → Zn 4s3d in antibonding states of Zn; whereas Er L3-edge is the transition of 2p→5d states of Er upon x-ray absorption that demonstrates the local atomic structure around Er in the (ZnO: Er)sapphire/silicon thin films. These transitions reveal the host-lattice in Zn-sites is substituted with Er3+-ions to preserve the symmetry with negligible distortion. The O K-edge shows the transition of O 2p - Zn 4s hybridized states through charge transfer the oxygen bands (Er-O-Zn) that reduced slightly atomic radius of Zn-O/Er-O/Zn-Zn found from extended x-ray absorption fine structure study, implies (ZnO: Er)sapphire is higher ferromagnetic behaviour than (ZnO: Er)silicon. The defect emission bands also identified through Er-substitution indicated that the emissions changed the diamagnetic-ZnO into room temperature ferromagnetic DMSs (ZnO: Er)sapphire/silicon thin film that could be useful for optoelectronic/magnetic applications.
關鍵字 ZnO; ZnO:Er; XANES; XPS; UPS
語言 en
ISSN 2045-2322
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 DEU
公開徵稿
出版型式 ,電子版
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機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/129397 )