Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process
學年 114
學期 1
出版（發表）日期 2025-10-27
作品名稱 Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process
作品名稱（其他語言）
著者 Sekhar Chandra Ray; Way-Faung Pong
單位
出版者
著錄名稱、卷期、頁數 Scientific Reports 15(1), 37533
摘要 “In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial. In each sputter/etch-cycle (τetch = 300s), x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UV PES) were measured and studied their change of electronic/bonding/atomic structure, density-of-states (DOS), valence band maximum (VBM), and work functions of the ultrathin films of indium-tin-oxide nanomaterial. During Ar+-ion non-reactive successive sputtering/etching process ((τetch = 0–1800 s) the thicknesses are reducing from 100 nm (ITO) ≈ 2.0 nm (ultrathin films of indium-tin-oxide). These results were further revealed with the “ex-situ” HR-SEM, HR-TEM, AFM, XRD, Raman, and x-ray absorption near edge structure (XANES) spectroscopy measurements, where a small shift of the Raman mode (A1g) peak with reduced intensity and XANES edge-shift with change in line shape/intensities further confirmed the formation of ultrathin films of indium-tin-oxide nanomaterial. The SEM/TEM/AFM of Ar+-ion sputtered/etched (τetch = 1800 s) of these films are considered as an alternative technique to make ultrathin films of indium-tin-oxide nanomaterial for the fabrication of future electronic/optoelectronic/photovoltaic devices.
關鍵字
語言 en
ISSN 2045-2322
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 DEU
公開徵稿
出版型式 ,電子版
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機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/129395 )