Energy-dependent carrier masses of zinc blende semiconductors: Solved using the Kane approximation
學年 114
學期 2
出版（發表）日期 2026-04-23
作品名稱 Energy-dependent carrier masses of zinc blende semiconductors: Solved using the Kane approximation
作品名稱（其他語言）
著者 Chun-Nan Chen; Win-Jet Luo; Bivas Panigrahi; Prateek Negi
單位
出版者
著錄名稱、卷期、頁數 Journal of Applied Physics 139(16)
摘要 The mathematical expressions for the effective carrier masses of zinc blende semiconductors are derived, with particular emphasis on their dependence on carrier energy. In this work, Hamiltonian matrix diagonalization is employed to obtain the band energies, followed by the Kane approximation to derive analytical expressions for energy-dependent effective masses. Unlike conventional approaches that assume constant effective mass near the band edge, the present formulation explicitly accounts for band non-parabolicity. InAs and GaAs are used as representative examples to verify consistency between the derived expressions and calculated band structures. The results provide a physically transparent and analytically tractable framework for modeling carrier transport in high-speed electronic and optoelectronic devices
關鍵字 energy-dependent; effective mass; zincblende semiconductor; diagonalization; Kane approximation; k⋅p; bond orbital model;
語言 en_US
ISSN 1089-7550
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Win-Jet Luo
審稿制度 是
國別 USA
公開徵稿
出版型式 ,電子版
SDGS 優質教育