Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
學年 113
學期 2
出版（發表）日期 2025-03-26
作品名稱 Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides
作品名稱（其他語言）
著者 Yi-Hsun Chen；Ping-Yuan Lo；Kyle W. Boschen；Chih-En Hsu；Yung-Ning Hsu；Luke N. Holtzman；Guan-Hao Peng；Chun-Jui Huang；Madisen Holbrook；Wei-Hua Wang；Katayun Barmak；James Hone；Pawel Hawrylak；Hung-Chung Hsueh；Jeffrey A. Davis；Shun-Jen Cheng；Michael S. Fuhrer；Shao-Yu Chen
單位
出版者
著錄名稱、卷期、頁數 Nature Communications 16, p.2935
摘要 Materials capable of light upconversion—transforming low-energy photons into higher-energy ones—are pivotal in advancing optoelectronics, energy solutions, and photocatalysis. However, the discovery in various materials pays little attention on few-layer transition metal dichalcogenides, primarily due to their indirect bandgaps and weaker light-matter interactions. Here, we report a pronounced light upconversion in few-layer transition metal dichalcogenides through upconversion photoluminescence spectroscopy. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light (2.34–3.1 eV). The findings pave the way for further exploration of light upconversion regarding fundamental properties and device applications in two-dimensional semiconductors.
關鍵字
語言 en
ISSN
期刊性質 國內
收錄於 SCI ESCI Scopus
產學合作 國內
通訊作者 Shun-Jen Cheng；Shao-Yu Chen
審稿制度 否
國別 GBR
公開徵稿
出版型式 ,電子版
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