Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions
學年 112
學期 2
出版（發表）日期 2024-06-13
作品名稱 Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions
作品名稱（其他語言）
著者 Chun‑Yen Chen, César Gonzalez‑Ruano, Isidoro Martinez, Farkhad G. Aliev, Dah‑Chin Ling, Yu‑Hui Tang, and Jhen‑Yong Hong
單位
出版者
著錄名稱、卷期、頁數 Scientific Reports 14,　13664
摘要 We exploit bias polarity dependent low-frequency noise (LFN) spectroscopy to investigate charge transport dynamics in ultra-thin AlOx-based magnetic tunnel junctions (MTJs) with bipolar resistive switching (RS). By measuring the noise characteristics across the entire bias voltage range of bipolar RS, we find that the voltage noise level exhibits an bias polarity dependence. This distinct feature is intimately correlated with reconfiguring of the inherently existing oxygen vacancies ( ) in as-grown MTJ devices during the SET and RESET switching processes. In addition, we observe two-level random telegraph noise (RTN) with a longer and shorter tunneling length in the high resistance state (HRS) and low resistance state (LRS) at a low bias voltage. The intrinsic voltage fluctuations of RTN arise from the dynamics of electron trapping/de-trapping processes at the -related trap sites. Notably, the RTN magnitude is similar in LRS but nonidentical in that of HRS for different bias polarity. These findings strongly suggest that the inherent are distributed near the top CoFe/AlOx interface in the HRS; in contrast, they are expanded to the middle region of the AlOx in the LRS. More importantly, we demonstrate that the location and distribution of the inherent can be electrically tuned, which plays an essential role in the charge transport dynamics in the ultra-thin AlOx-based MTJs and have significant implications for developing emergent memory and logic devices.
關鍵字
語言 en_US
ISSN 2045-2322
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 J.Y. Hong
審稿制度 是
國別 TWN
公開徵稿
出版型式 ,電子版,紙本