Effects of heavy ion irradiation on the thermoelectric properties of In2(Te1-xSex)3 thin films
學年 111
學期 1
出版（發表）日期 2022-10-27
作品名稱 Effects of heavy ion irradiation on the thermoelectric properties of In2(Te1-xSex)3 thin films
作品名稱（其他語言）
著者 Dong, Chung-li
單位
出版者
著錄名稱、卷期、頁數 Nanomaterials 12(21), 3782
摘要 Ion irradiation is an exceptionally effective approach to induce controlled surface modification/defects in semiconducting thin films. In this investigation, ion-irradiated Se–Te-based compounds exhibit electrical transport properties that greatly favor the transformation of waste heat into electricity. Enhancements of both the Seebeck coefficient (S) and the power factor (PF) of In2(Te0.98Se0.02)3 films under 120 MeV Ni9+ ion irradiation were examined. The maximum S value of the pristine film was about ~221 µVK−1. A significantly higher S value of about ~427 µVK−1 was obtained following irradiation at 1 × 1013 ions/cm2. The observed S values suggest the n-type conductivity of these films, in agreement with Hall measurements. Additionally, Ni ion irradiation increased the PF from ~1.23 to 4.91 µW/K2m, demonstrating that the irradiated films outperformed the pristine samples. This enhancement in the TE performance of the In2(Te0.98Se0.02)3 system is elucidated by irradiation-induced effects that are revealed by structural and morphological studies.
關鍵字 thermoelectric；defects；power factor；SHI irradiation；electrical resistivity
語言 en_US
ISSN 2079-4991
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 CHE
公開徵稿
出版型式 ,電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/124096 )