Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
學年 110
學期 1
出版（發表）日期 2021-10-16
作品名稱 Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
作品名稱（其他語言）
著者 Jhen-Yong Hong; Chun-Yen Chen; Dah-Chin Ling; Isidoro Martínez; César González-Ruano; Farkhad G. Aliev
單位
出版者
著錄名稱、卷期、頁數 Electronics 10(20), 2525
摘要 Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter α and the exponent γ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.
關鍵字 low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magneto-resistance (MR);Hooge’s parameter
語言 en
ISSN 1654-8809
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 SWE
公開徵稿
出版型式 ,紙本