教師資料查詢 | 類別: 期刊論文 | 教師: 林大欽LING, DAH-CHIN (瀏覽個人網頁)

標題:Bilateral Photoresponse of a Graphene-Oxide-Semiconductor Heterostructure Diode
學年109
學期2
出版(發表)日期2021/05/28
作品名稱Bilateral Photoresponse of a Graphene-Oxide-Semiconductor Heterostructure Diode
作品名稱(其他語言)
著者Ching-Ping Lee; Ming-Ying Cai; Jen-Yu Wang; D.C. Ling; Yung-Fu Chen; Cen-Shawn Wu; Jeng-Chung Chen
單位
出版者
著錄名稱、卷期、頁數PHYSICAL REVIEW APPLIED 15, 054067
摘要We report on the photodetection properties of a graphene-oxide-semiconductor (GOS) diode by measuring its current-voltage characteristics under illumination with light-emitting diodes (LEDs). We demonstrate that a GOS structure, with graphene used as a transparent gate electrode to form an inversion layer at the oxide-semiconductor interface, can function as a GOS field-effect transistor operable at low temperatures down to 1.5 K. By investigating the gate tunneling current in a GOS diode with a transistor structure, we find that the dark current is below approximately 0.1 nA at
T
=
150
K, which is almost two orders of magnitude lower than that in a graphene-semiconductor (GS) Schottky-diode photodetector. Notably, the GOS diode shows a bilateral photoresponse in both forward- and reverse-bias regimes under LED illumination. The photocurrent responsivity
R
reaches approximately 100 mA/W at
T
=
150
K with a low bias voltage of approximately

0.6
V, which is one order of magnitude lower than that applied in a GS Schottky-diode photodetector. We propose that a GOS heterostructure can be made to behave as a
p
-
i
-
n
or an
n
-
i
-
p
diode by manipulating the polarity of the bias voltage applied to the graphene gate. In addition, we quantitatively simulate the key features of the dark current by taking into account the associated bipolar current in graphene along with band-to-trap tunneling and trap-assisted tunneling processes. Our theoretical model sheds light on the mechanism of the bilateral photoresponse of the GOS photodetector. Our work paves the way to engineering hybrid
關鍵字Elemental semiconductors;Field-effect transistors;Graphene;Multilayer thin films;Optical sources & detectors;Photodiodes
語言英文(美國)
ISSN
期刊性質國外
收錄於SCI;
產學合作
通訊作者Ching-Ping lee
審稿制度
國別美國
公開徵稿
出版型式,電子版,紙本
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