Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
學年 109
學期 1
出版（發表）日期 2020-10-01
作品名稱 Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
作品名稱（其他語言）
著者 Jui-Yuan Chen; Min-Ci Wu; Yi-Hsin Ting; Wei-Che Lee; Ping-Hung Yeh; Wen-Wei Wu
單位
出版者
著錄名稱、卷期、頁數 Scripta Materialia 187, p.439-444
摘要 Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5G with AI in near future applications.
關鍵字 nanowires;RRAM;diode;ZnO;homojunction
語言 en
ISSN 1872-8456
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 GBR
公開徵稿
出版型式 ,電子版,紙本
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