Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
學年 101
學期 1
出版（發表）日期 2012-12-07
作品名稱 Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1−xO2 (x = 0--0.1)
作品名稱（其他語言）
著者 Shashi B. Singh; L. T. Yang; Y. F. Wang; Y. C. Shao; C. W. Chiang; J. W. Chiou; K. T. Lin; S. C. Chen; B. Y. Wang; C. H. Chuang; D. C. Ling; W. F. Pong; M.-H. Tsai; H. M. Tsai; C. W. Pao; H. W. Shiu; C. H. Chen; H.-J. Lin; J. F. Lee; H. Yamane; N. Kosugi
單位
出版者
著錄名稱、卷期、頁數 Phys. Rev. B 86, 241103(R)
摘要 The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2(x = 0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure(XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2 samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott’s three-dimensional variable range hopping occurs around 250 K.
關鍵字
語言 en
ISSN 1550-235X
期刊性質 國外
收錄於
產學合作
通訊作者
審稿制度 否
國別 GBR
公開徵稿
出版型式 ,電子版
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機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/111848 )