Magnetic quantization in monolayer GaAs | |
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學年 | 105 |
學期 | 1 |
發表日期 | 2017-01-16 |
作品名稱 | Magnetic quantization in monolayer GaAs |
作品名稱(其他語言) | |
著者 | Hsien-Ching Chung; Ching-Hong Ho; Cheng-Peng Chang; Chun-Nan Chen; Chih-Wei Chiu; Ming-Fa Lin |
作品所屬單位 | |
出版者 | |
會議名稱 | Annual Meeting of the Physical Society of the Republic of China (Taiwan), 2017(2017年中華民國物理年會) |
會議地點 | 淡水區, 新北市, 台灣 |
摘要 | Since 2004, the discovery of graphene has opened the possibility of two-dimensional materials both in technological applications and fundamental researches. However, the gapless feature limits the applications of pristine graphene. Recently, researchers have new opportunities and challenges for post-graphene two-dimensional nanomaterials, such as silicene (Si), germanene (Ge), and tinene (Sn), owing to the sufficiently large energy gap (of the size comparable to the thermal energy at room temperature). Apart from the group IV elements, the buckled honeycomb lattices of the binary compositions of group III-V elements have been proposed as a new class of post-graphene two-dimensional nanomaterials. In this study, the generalized tight-binding model including the spin-orbital interactions is utilized to investigate the essential properties of monolayer GaAs. The magnetic quantization, band structure, wave function, and density of states are discussed in detail. (One of us (Hsien-Ching Chung) thanks Ming-Hui Chung and Su-Ming Chen for financial support. This work was supported in part by the Ministry of Science and Technology of Taiwan under grant number MOST 105-2811-M-017-003.) |
關鍵字 | two-dimensional materials;GaAs;magneto-electronic property;Landau quantization;post-graphene |
語言 | zh_TW |
收錄於 | |
會議性質 | 國內 |
校內研討會地點 | 淡水校園 |
研討會時間 | 20170116~20170118 |
通訊作者 | |
國別 | TWN |
公開徵稿 | |
出版型式 | |
出處 | 2017年中華民國物理年會 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/109239 ) |