Landau quantization in monolayer GaAs
學年 105
學期 2
發表日期 2017-03-13
作品名稱 Landau quantization in monolayer GaAs
作品名稱（其他語言）
著者 Hsien-Ching Chung; Ching-Hong Ho; Cheng-Peng Chang; Chun-Nan Chen; Chih-Wei Chiu; Ming-Fa Lin
作品所屬單位
出版者
會議名稱 APS March Meeting 2017
會議地點 New Orleans, Louisiana, USA
摘要 Landau quantization in monolayer GaAs1 HSIEN-CHING CHUNG2, National Kaohsiung Normal University, CHING-HONG HO, CHENG-PENG CHANG, Tainan University of Technology, CHUN-NAN CHEN, Tamkang University, CHIH-WEI CHIU, National Kaohsiung Normal University, MING-FA LIN, National Cheng Kung University — In the past decade, the discovery of graphene has opened the possibility of two-dimensional materials both in fundamental researches and technological applications. However, the gapless feature shrinks the applications of pristine graphene. Recently, researchers have new challenges and opportunities for post-graphene two-dimensional nanomaterials, such as silicene (Si), germanene (Ge), and tinene (Sn), due to the large enough energy gap (of the size comparable to the thermal energy at room temperature). Apart from the graphene analogs of group IV elements, the buckled honeycomb lattices of the binary compositions of group III-V elements have been proposed as a new class of post-graphene two-dimensional nanomaterials. In this study, the generalized tight-binding model considering the spin-orbital coupling is used to investigate the essential properties of monolayer GaAs. The Landau quantization, band structure, wave function, and density of states are discussed in detail.
關鍵字 Landau quantization;monplayer GaAs
語言 en_US
收錄於
會議性質 國際
校內研討會地點 無
研討會時間 20170313~20170317
通訊作者
國別 USA
公開徵稿
出版型式
出處 APS March Meeting 2017
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/109240 )