Micro Pressure Sensors of 50 μm Size Fabricated by a Standard CMOS Foundry and a Novel Post Process
學年 94
學期 1
發表日期 2006-01-22
作品名稱 Micro Pressure Sensors of 50 μm Size Fabricated by a Standard CMOS Foundry and a Novel Post Process
作品名稱(其他語言)
著者 Wang, Hsin-hsiung; Hsu, Chun-wei; Liao, Wei-hao; 楊龍杰; Yang, Lung-jieh; Dai, Ching-liang
作品所屬單位 淡江大學機械與機電工程學系
出版者 Piscataway: Institute of Electrical and Electronics Engineers (IEEE)
會議名稱 Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
會議地點 Istanbul, Turkey
摘要 This paper describes a piezoresistive micro pressure sensor with a size of 50μm made by a standard CMOS foundry and a novel post process. The material of the sensor diaphragm is silicon dioxide, and the piezoresistors are made by polysilicon. For releasing the diaphragms of the micro pressure sensors, this work proposes to use the front-side etching technique with etching holes of 5μm×5μm only. Finally, we use one of the protein stuffs, gelatin, to seal the etching holes. The sensitivity of the piezoresistive pressure sensor is 8.56±0.13 mV/V/psi.
關鍵字
語言 en
收錄於
會議性質 國際
校內研討會地點
研討會時間 20060122~20060126
通訊作者
國別 TUR
公開徵稿
出版型式
出處 Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on, pp.578-581
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