Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment
學年 103
學期 1
出版（發表）日期 2014-08-01
作品名稱 Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment
作品名稱（其他語言）
著者 Kamatchi Jothiramalingam Sankaran; Srinivasu Kunuku; Leou, Keh-Chyang; Tai, Nyan-Hwa; Lin, I-Nan; 林諭男
單位 淡江大學物理學系
出版者 Washington, DC: American Chemical Society
著錄名稱、卷期、頁數 ACS Applied Materials & Interfaces 6(16), pp.14543−14551
摘要 Enhanced electron field emission (EFE) properties due to hydrogen post-treatment at 600 °C have been observed for ultrananocrystalline diamond (UNCD) films. The EFE properties of H2-gas-treated UNCD films could be turned on at a low field of 5.3 V/μm, obtaining an EFE current density of 3.6 mA/cm2 at an applied field of 11.7 V/μm that is superior to those of UNCD films treated with H2 plasma. Transmission electron microscopic investigations revealed that H2 plasma treatment induced amorphous carbon (a-C) (and graphitic) phases only on the surface region of the UNCD films but the interior region of the UNCD films still contained very small amounts of a-C (and graphitic) grain boundary phases, resulting in a resistive transport path and inferior EFE properties. On the other hand, H2 gas treatment induces a-C (and graphitic) phases along the grain boundary throughout the thickness of the UNCD films, resulting in creation of conduction channels for the electrons to transport from the bottom of the films to the top and hence the superior EFE properties.
關鍵字 ultrananocrystalline diamond films; hydrogen post-treatments; electron field emission; plasma illumination; electron energy loss spectroscopy
語言 en
ISSN
期刊性質 國外
收錄於
產學合作
通訊作者
審稿制度
國別 USA
公開徵稿
出版型式 紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100153 )

機構典藏連結