| 標題：Stress relaxation in GaN by transfer bonding on Si substrates |
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| 學年 | 96 |
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| 學期 | 1 |
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| 出版（發表）日期 | 2007/12/01 |
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| 作品名稱 | Stress relaxation in GaN by transfer bonding on Si substrates |
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| 作品名稱（其他語言） | |
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| 著者 | Hsu, S. C.; Pong, B. J.; Li, W. H.; Beechem, Thomas E., III; Graham, Samuel; Liu, C. Y. |
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| 單位 | 淡江大學化學工程與材料工程學系 |
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| 出版者 | American Institute of Physics |
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| 著錄名稱、卷期、頁數 | Applied Physics Letters 91(25), 251114 (3 pages) |
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| 摘要 | The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 μm, the high compressive stress state in GaN layer was relieved. A 10 μm Au bonding layer thickness is shown to possess the maximum compressive stress relief and also the deformation potential of the quantum well was found to be ~85 meV. A nonlinear parabolic relation between luminescent bandgap and the biaxial stress of the transferred GaN epilayer in the compressive region was observed. |
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| 關鍵字 | III-V semiconductors;Quantum wells;III-V semiconductors;Quantum wells;Elasticity and anelasticity;stress-strain relations;III-V;II-VI semiconductors |
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| 語言 | 英文 |
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| ISSN | 0003-6951 |
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| 期刊性質 | |
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| 收錄於 | SCI |
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| 產學合作 | |
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| 出版型式 | 紙本 |
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