High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
學年 97
學期 2
出版（發表）日期 2009-07-01
作品名稱 High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
作品名稱（其他語言）
著者 Lo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C.
單位 淡江大學化學工程與材料工程學系
出版者 American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 95(4), 041109 (3 pages)
摘要 We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.
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語言 en
ISSN 0003-6951
期刊性質
收錄於 SCI
產學合作
通訊作者
審稿制度
國別
公開徵稿
出版型式 紙本
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