教師資料查詢 | 類別: 期刊論文 | 教師: 許世杰HSU, SHIH-CHIEH (瀏覽個人網頁)

標題:Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
學年98
學期1
出版(發表)日期2009/12/01
作品名稱Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
作品名稱(其他語言)
著者Lo, M.-H.; Tu, P.-M.; Wang, C.-H.; Cheng, Y.-J.; Hung, C.-W.; Hsu, S.-C.; Kuo, H.-C.; Zan, H.-W.; Wang, S.-C.; Chang, C.-Y.; Liu, C.-M.
單位淡江大學化學工程與材料工程學系
出版者American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 95(21), 211103
摘要A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1×109 to 4×107 cm-2. The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
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語言英文
ISSN0003-6951
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收錄於SCI
產學合作
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