Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
學年 102
學期 2
出版（發表）日期 2014-05-01
作品名稱 Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma
作品名稱（其他語言）
著者 A. Saravanan; Huang, B. R.; K. J. Sankaran; Dong, C. L.; Tai, N. H.; Lin, I. N.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 104(18), 181603(5pages)
摘要 This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.
關鍵字
語言 en
ISSN 0003-6951
期刊性質
收錄於
產學合作
通訊作者
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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