| Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films | |
|---|---|
| 學年 | 99 |
| 學期 | 1 |
| 出版（發表）日期 | 2010-10-01 |
| 作品名稱 | Effect of gigaelectron volt Au-ion irradiation on the characteristics of ultrananocrystalline diamond films |
| 作品名稱（其他語言） | |
| 著者 | Chen, Huang-Chin; Teng, Kuang-Yau; Tang, Chen-Yau; Sundaravel, Balakrishnan; Amirthapandian, Sankarakumar; Lin, I-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 108(12), 123712(7pages) |
| 摘要 | The effect of 2.245 GeV Au-ion irradiation/postannealing processes on the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films was investigated. Au-ion irradiation with a fluence of around 8.4×1013 ions/cm2 is required to induce a large improvement in the EFE properties of the UNCD films. Postannealing the Au-ion irradiated films at 1000 °C for 1 h slightly degraded the EFE properties of the films but the resulting EFE behavior was still markedly superior to that of pristine UNCD films. Transmission electron microscopy examinations revealed that the EFE properties of the UNCD films are primarily improved by Au-ion irradiation/postannealing processes because of the formation of nanographites along the trajectory of the irradiating ions, which results in an interconnected path for electron transport. In contrast, the induction of grain growth process due to Au-ion irradiation in UNCD films is presumed to insignificantly degrade the EFE properties for the films as the aggregates are scarcely distributed and do not block the electron conducting path. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0021-8979 1089-7550 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | Lin, I-Nan |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/58289 ) |
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