Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties
學年 101
學期 1
出版（發表）日期 2012-10-24
作品名稱 Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties
作品名稱（其他語言）
著者 A. P. Thomas; Chen. H. C.; Tseng, H. H.; Wu, H. C.; Lee, C. Y.; Cheng, H. F.; Tai, N. H.; Lin, I. N.
單位 淡江大學物理學系
出版者 Royal Society of Chemistry
著錄名稱、卷期、頁數 ACS Applied Materials & Interfaces 4(10), pp.5103-5108
摘要 The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
關鍵字
語言 en
ISSN 2050-7526
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 USA
公開徵稿
出版型式 電子版 紙本
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100069 )

機構典藏連結