STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
學年 101
學期 2
出版（發表）日期 2013-02-01
作品名稱 STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films
作品名稱（其他語言）
著者 Sundaravel, B.; Panda, Kalpataru; Dhandapani R.; Panigrahi, B. K.; Nair, K. G. M.; Lin, I-Nan
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 AIP Conference Proceedings 1512(1), pp.384-385
摘要 3 keV nitrogen ions are implanted into UNCD/Si from our 30 kV ion accelerator. Field emission property is enhanced upon nitrogen implantation in comparision to as-prepared UNCD. STM shows that there is agglomeration of diamond grains. CITS measurements show that diamond grains are the prominent electron emitters while grain boundaries were the prominent emitters for 75 keV N+ implantation. When N atoms are at the surface, electron emission by transfer-doping process appears to be the physical mechanism involved. When they are buried deeper as in the case of 75 keV ions, grain boundary conduction-channel process is valid.
關鍵字 Diamond; Nanocrystalline materials; Grain boundaries; Ion implantation; Scanning tunneling microscopy
語言
ISSN 0094-243X 1551-7616
期刊性質 國外
收錄於
產學合作
通訊作者 Lin, I-Nan
審稿制度
國別 USA
公開徵稿
出版型式 紙本 電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97205 )

機構典藏連結