Gold ion implantation induced high conductivity and enhanced electron field emission properties in ultrananocrystalline diamond films
學年 101
學期 2
出版（發表）日期 2013-02-01
作品名稱 Gold ion implantation induced high conductivity and enhanced electron field emission properties in ultrananocrystalline diamond films
作品名稱（其他語言）
著者 K. J. Sankaran; Chen, H. C.; B. Sundaravel; Lee, C. Y.; Tai, N. H.; Lin I. N.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 102(6), 061604(4pages)
摘要 We report high conductivity of 185 (Ω cm)−1 and superior electron field emission (EFE) properties, viz. low turn-on field of 4.88 V/μm with high EFE current density of 6.52 mA/cm2 at an applied field of 8.0 V/μm in ultrananocrystalline diamond (UNCD) films due to gold ion implantation. Transmission electron microscopy examinations reveal the presence of Au nanoparticles in films, which result in the induction of nanographitic phases in grain boundaries, forming conduction channels for electron transport. Highly conducting Au ion implanted UNCD films overwhelms that of nitrogen doped ones and will create a remarkable impact to diamond-based electronics.
關鍵字
語言 en_US
ISSN 1077-3118 0003-6951
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Tai, N. H.; Lin I. N.
審稿制度
國別 USA
公開徵稿
出版型式 電子版 紙本
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