| Structural and electrical properties of conducting diamond nanowires | |
|---|---|
| 學年 | 101 |
| 學期 | 1 |
| 出版（發表）日期 | 2013-01-17 |
| 作品名稱 | Structural and electrical properties of conducting diamond nanowires |
| 作品名稱（其他語言） | |
| 著者 | Kamatchi Jothiramalingam Sankaran; Lin, Yen-Fu; Jian, Wen-Bin; Chen, Huang-Chin; Kalpataru Panda; Balakrishnan Sundaravel; Dong, Chung-Li; Tai, Nyan-Hwa; Lin, I-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | Washington: American Chemical Society |
| 著錄名稱、卷期、頁數 | ACS Applied Materials and Interfaces 5(4), pp.1294-1301 |
| 摘要 | Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices. |
| 關鍵字 | diamond nanowire films;graphitic grain boundary;high resolution transmission electron microscopy;scanning tunneling spectroscopy;hopping transport;electron field emission |
| 語言 | en_US |
| ISSN | 1944-8244 1944-8252 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97187 ) |
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