矽基材表面性狀對奈米碳管成長機制影響之研究
學年 96
學期 1
發表日期 2007-11-23
作品名稱 矽基材表面性狀對奈米碳管成長機制影響之研究
作品名稱(其他語言) Influence of Surface Integrity of Silicon Substrate on the Growth Mechanisms of Carbon Nanotube
著者 郭家維; 許家偉; 周文成; 趙崇禮; 馬廣仁; 范偉華
作品所屬單位 淡江大學機械與機電工程學系
出版者
會議名稱 2007 CSME CONF中國機械工程學會第24屆全國學術研討會=The 24th National Conference on Mechanical Engineering the Chinese Society of Mechanical Engineers
會議地點 臺北市, 臺灣
摘要 在本研究中,將採用化學氣相沉積法利用乙炔作為碳源、二茂鐵則作為金屬催化劑反應沉積奈米碳管,藉由改變矽基材表面處理參數,進而觀察不同矽基材表面處理參數對奈米碳管成長之影響,並且利用場發射掃描式電子顯微鏡觀察奈米碳管之成長形態。實驗結果顯示;經過大氣電漿表面處理過後的試片,可明顯改善試片表面的吸附能力,使得碳原子和催化劑能有效地沉積在試片表面。經過壓痕處理以及輪磨處理過後的試片,由於對試片表面做處理,使得材料表面產生塑性變形而產生變質層,實驗證明變質層的厚薄程度與變質層中含鐵量的多寡可以很明顯的影響奈米碳管的成長。 Chemical vapor deposition (CVD) was adopted in this research to synthesize multi-wall carbon nanotubes (MWCNT) where acetylene was used as carbon source and ferrocene-xylene worked as catalyst. Various surface pre-treatments were made on the silicon substrate to investigate the effect of the surface integrity on the growth of MWCNT. The morphology and characteristics of obtained carbon nanotubes were analyzed using field-emission scanning electron microscope (FESEM) and micro-Raman spectrometer. Results showed that atmospheric pressure air plasma (APAP) surface pre-treatment could increase the deposition rate of carbon and extend the growing temperature to up around 900 degree C. The amorphous layer induced by indentation or grinding processes, especially those having iron diffused into the amorphous layer, proved to have profound effect on the growth rate and growing temperature of carbon nanotube.
關鍵字 奈米碳管;化學氣相沉積;變質層;Carbon nanotubes;Chemical vapor deposition;Amorphous layer
語言 zh_TW
收錄於
會議性質 國內
校內研討會地點
研討會時間 20071123~20071124
通訊作者
國別 TWN
公開徵稿 Y
出版型式 紙本
出處 2007 CSME CONF中國機械工程學會第24屆全國學術研討會論文集=Proceedings of the 24th National Conference on Mechanical Engineering the Chinese Society of Mechanical Engineers,6頁
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96464 )

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