| Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor | |
|---|---|
| 學年 | 101 |
| 學期 | 1 |
| 出版（發表）日期 | 2012-09-01 |
| 作品名稱 | Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor |
| 作品名稱（其他語言） | |
| 著者 | Chen, Chun-Nan; Chang, Sheng-Hsiung; Su, Wei-Long; Jen, Jen-Yi; Li, Yiming |
| 單位 | 淡江大學物理學系 |
| 出版者 | Moscow: MAIK Nauka - Interperiodica |
| 著錄名稱、卷期、頁數 | Semiconductors 46(9), pp.1126-1134 |
| 摘要 | In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1063-7826 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | RUS |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/76950 ) |
| SDGS | 永續城市與社區,可負擔的潔淨能源,產業創新與基礎設施 |
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