Theory for Slightly Doped Antiferromagnetic Mott Insulators
學年 91
學期 2
出版(發表)日期 2003-05-01
作品名稱 Theory for Slightly Doped Antiferromagnetic Mott Insulators
作品名稱(其他語言)
著者 Lee, T.-K.; Ho, Chang-ming; Nagaosa, Naoto; Lee, Wei-Cheng
單位 淡江大學物理學系
出版者 New York: Springer New York LLC
著錄名稱、卷期、頁數 Journal of Low Temperature Physics 131(3-4), pp.169-179
摘要 New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons.
關鍵字
語言 en
ISSN 0022-2291
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Ho, Chang-Ming
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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