Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy
學年 90
學期 1
出版（發表）日期 2001-10-01
作品名稱 Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy
作品名稱（其他語言）
著者 Tsai, H. M.; Jan, J. C.; Chiou, J. W.; Pong, W. F.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Yang, Y. W.; Lai, L. J.; Wu, J. J.; Wu, C. T.; Chen, K. H.; Chen, L. C.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 79(15), pp.2393-2395
摘要 X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π∗ peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young’s modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.
關鍵字 silicon compounds; sputtered coatings; XANES; noncrystalline structure; electronic structure; bonds (chemical); Young's modulus
語言 en
ISSN 0003-6951
期刊性質 國外
收錄於
產學合作
通訊作者 Pong, W. F.
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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