Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
學年 94
學期 2
出版（發表）日期 2006-05-01
作品名稱 Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
作品名稱（其他語言）
著者 Pao, C. W.; Babu, P. D.; Tsai, H. M.; Chiou, J. W.; Ray, S. C.; Yang, S. C.; Chien, F. Z.; Pong, W. F.; Tsai, M.-H. ; Hsu, C. W. ; Chen, L. C.; Chen, C. C.; Chen, K. H.; Lin, H.-J.; Lee, J. F.; Guo, J. H.
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics
著錄名稱、卷期、頁數 Applied Physics Letters 88(22), pp.223113(3pages)
摘要 Nitrogen (N) and metal (Al, Ga, and In) K-edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
關鍵字 nanostructured materials; X-ray absorption; X-ray emission spectra; Raman spectra; XANES; aluminium compounds; gallium compounds; indium compounds; III-V semiconductors; wide band gap semiconductors; conduction bands; energy gap
語言 en
ISSN 0003-6951
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Pong, W. F.
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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