Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1-xO2 (x = 0--0.1)
學年 101
學期 1
出版（發表）日期 2012-12-07
作品名稱 Correlation between p-type conductivity and electronic structure of Cr-deficient CuCr1-xO2 (x = 0--0.1)
作品名稱（其他語言）
著者 Singh, S. B.; Yang, L. T.; Wang, Y. F.; Shao, Y. C.; Chiang, C. W.; Chiou, J. W.; Lin, K. T.; Chen, S. C.; Wang, B. Y.; Chuang, C. H.; Ling, D. C.; Pong, W. F.; Tsai, M.-H.; Tsai, H. M.; Pao, C. W.; Shiu, H. W.; Chen, C. H.; Lin, H.-J.; Lee, J. F.; Yamane, H.; Kosugi, N.
單位 淡江大學物理學系
出版者 College Park: American Physical Society
著錄名稱、卷期、頁數 Phys. Rev. B 86, 241103(R)(6pages)
摘要 The correlation between the p-type hole conduction and the electronic structures of Cr-deficient CuCr1−xO2 (x=0−0.1) compounds was investigated using O K-, Cu, and Cr L3,2-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy, and x-ray emission spectroscopy measurements. XANES spectra reveal a gradual increase in the Cu valence from Cu1+ to Cu2+ with increasing Cr deficiency x, whereas, the valence of Cr remains constant as Cr3+. These results indicate that the p-type conductivity in the CuCr1−xO2 samples is enhanced by a Cu1+-O-Cu2+ rather than a Cr3+-Cr4+ or direct Cu1+-Cu2+ hole mechanism. Remarkable Cr-deficiency-induced changes in the densities of Cu 3d, Cu 3d-O 2p, and O 2p states at or near the valence-band maximum or the Fermi level were also observed. In addition, a crossover of conduction mechanism from thermally activated (TA) hopping to a combination of TA and Mott's three-dimensional variable range hopping occurs around 250 K.
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語言 en_US
ISSN 1550-235X
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 是
國別 USA
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出版型式 ,電子版
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