Origin of a needle-like granular structure for ultrananocrystalline diamond films grown in a N2/CH4 plasma
學年 101
學期 1
出版（發表）日期 2012-09-12
作品名稱 Origin of a needle-like granular structure for ultrananocrystalline diamond films grown in a N2/CH4 plasma
作品名稱（其他語言）
著者 Sankaran, K. J.; Kurian, J.; Chen, H. C.; Dong, C. L.; Lee, C. Y.; Tai, N. H.; Lin, I. N.
單位 淡江大學物理學系
出版者 Bristol: Institute of Physics Publishing Ltd.
著錄名稱、卷期、頁數 Journal of Physics D: Applied Physics 45(36), 365303(9pages)
摘要 Microstructural evolution as a function of substrate temperature (TS) for conducting ultrananocrystalline diamond (UNCD) films is systematically studied. Variation of the sp2 graphitic and sp3 diamond content with TS in the films is analysed from the Raman and near-edge x-ray absorption fine structure spectra. Morphological and microstructural studies confirm that at TS = 700 °C well-defined acicular structures evolve. These nanowire structures comprise sp3 phased diamond, encased in a sheath of sp2 bonded graphitic phase. TS causes a change in morphology and thereby the various properties of the films. For TS = 800 °C the acicular grain growth ceases, while that for TS = 700 °C ceases only upon termination of the deposition process. The grain-growth process for the unique needle-like granular structure is proposed such that the CN species invariably occupy the tip of the nanowire, promoting an anisotropic grain-growth process and the formation of acicular structure of the grains. The electron field emission studies substantiate that the films grown at TS = 700 °C are the most conducting, with conduction mediated through the graphitic phase present in the films.
關鍵字
語言 en
ISSN 0022-3727
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Tai, N. H.; Lin, I. N.
審稿制度 是
國別 GBR
公開徵稿
出版型式 電子版 紙本
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