Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
學年 100
學期 2
出版（發表）日期 2012-03-01
作品名稱 Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
作品名稱（其他語言）
著者 Teng, Kuang-yau; Chen, Huang-chin; Tzeng, Gaung-chin; Tang, Chen-yau; Cheng, Hsiu-fung; Lin, I-nan
單位 淡江大學物理學系
出版者 College Park: American Institute of Physics(AIP)
著錄名稱、卷期、頁數 Journal of Applied Physics 111(5), 053701(10pages)
摘要 The evolution of diamond films in bias-enhanced-nucleation (BEN) and bias-enhanced-growth (BEG) processes was systematically investigated. While the BEN process can efficiently form diamond nuclei on the Si substrates, BEG with large enough applied field (> –400 V) and for sufficiently long periods (>60 min) was needed to develop proper granular structure for the diamond films so as to enhance the electron field emission (EFE) properties of the films. For the films BEG under -400 V for 60 min (after BEN for 10 min), the EFE process can be turned on at a field as small as 3.6 V/μm, attaining a EFE current density as large as 325 μA/cm2 at an applied field of 15 V/μm. Such an EFE behavior is even better than that of the ultrananocrystalline diamond films grown in CH4/Ar plasma. Transmission electron microscopic examination reveals that the prime factor enhancing the EFE properties of these films is the induction of the nano-graphite filaments along the thickness of the films that facilitates the transport of electrons through the films.
關鍵字
語言 en
ISSN 0021-8979
期刊性質 國外
收錄於
產學合作
通訊作者 Lin, I-nan
審稿制度 是
國別 USA
公開徵稿
出版型式 紙本
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