Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process
學年 98
學期 1
出版(發表)日期 2010-01-01
作品名稱 Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process
作品名稱(其他語言)
著者 Cheng, Hsiu-Fung; Chen, Yu-Wen; Joseph, P.T.; Hung, Chuan-Chic; Chiang, Horng-Yi; Lin, I-Nan
單位 淡江大學物理學系
出版者 London: Elsevier Ltd
著錄名稱、卷期、頁數 Journal of the European Ceramic Society 30(2), pp.447-451
摘要 The 0.6[0.94Pb(Zn1/3Nb2/3)O3 + 0.06BaTiO3] + 0.4[0.48(PbZrO3) + 0.52(PbTiO3)], PBZNZT, thin films were synthesized by pulsed laser deposition (PLD) process. The PBZNZT films possess higher insulating characteristics than the PZT (or PLZT) series materials due to the suppressed formation of defects, therefore, thin-film forms of these materials are expected to exhibit superior ferroelectric properties as compared with the PZT (or PLZT)-series thin films. Moreover, the Ba(Mg1/3Ta2/3)O3 thin film of perovskite structure was used as buffer layer to reduce the substrate temperature necessary for growing the perovskite phase PBZNZT thin films. The PBZNZT thin films of good ferroelectric and dielectric properties (remanent polarization Pr = 26.0 μC/cm2, coercive field Ec = 399 kV/cm, dielectric constant K = 737) were achieved by PLD at 400°C. Such a low substrate temperature technique makes this process compatible with silicon device process. Moreover, thus obtained PBZNZT thin films also possess good optical properties (about 75% transmittance at 800 nm). These results imply that PBZNZT thin films have potential in photonic device applications.
關鍵字 Films; Dielectric properties; Ferroelectric properties; Optical properties; Perovskites; Pulsed laser deposition
語言 en
ISSN 0955-2219
期刊性質 國外
收錄於 SCI EI
產學合作
通訊作者 Cheng, Hsiu-Fung
審稿制度
國別 GBR
公開徵稿
出版型式 紙本
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