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標題:Near band edge anisotropic optical transitions in wide band gap semiconductor Cu2ZnSiS4
學年99
學期1
出版(發表)日期2010/10/01
作品名稱Near band edge anisotropic optical transitions in wide band gap semiconductor Cu2ZnSiS4
作品名稱(其他語言)
著者Levcenco, S.; Dumcenco, D.; Huang, Y. S.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.; Du, C. H.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 108(7), 073508(5pages)
摘要In this study, anisotropic near band edge transitions of Cu2ZnSiS4 single crystals grown by chemical vapor transport were characterized by using polarization-dependent absorption, piezoreflectance (PzR) and surface photovoltage (SPV) spectroscopy techniques at room temperature. The measurements were carried out on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. Analysis of absorption and SPV spectra reveal indirect allowed transitions for the absorption edge of Cu2ZnSiS4. The estimated values of indirect band gap are 2.97 eV and 3.07 eV, respectively, for E⊥c and E∥c polarization configurations. The polarization-dependent PzR and SPV spectra in the vicinity of the direct band gap of Cu2ZnSiS4 reveal features E⊥ex and E∥ex at around 3.32 eV and 3.41 eV for E⊥c and E∥c polarizations, respectively. Both features E⊥ex and E∥ex are associated with the interband excitonic transitions at point Γ and can be explained by crystal-field splitting of valence band. Based on the experimental observations, a plausible band structure near band edge of Cu2ZnSiS4 is proposed.
關鍵字
語言英文
ISSN0021-8979; 1089-7550
期刊性質國外
收錄於SCI
產學合作
通訊作者
審稿制度
國別美國
公開徵稿
出版型式紙本
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