Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaN Wurtzite Materials
學年 100
學期 2
出版（發表）日期 2012-02-01
作品名稱 Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaN Wurtzite Materials
作品名稱（其他語言）
著者 Chen, Chun-Nan; Chang, Sheng-Hsiung; Su, Wei-Long; Wang, Wan-Tsang; Kao, Hsiu-Fen; Jen Jen-Yi; Li, Yiming
單位 淡江大學物理學系
出版者 Seoul: The Korean Physical Society
著錄名稱、卷期、頁數 Journal of the Korean Physical Society 60(3), pp.403-409
摘要 The bulk inversion asymmetry (Dresselhaus) terms (i.e., B 2, B 1, and B′1 terms) of wurtzite materials are determined. The 2 × 2 conduction band, 2 × 2 heavy-hole band, 2 × 2 light-hole band, and 2 × 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 × 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.
關鍵字 Spin splitting; Inversion asymmetry; GaN; Dresselhaus; Wurtzite
語言 en
ISSN 0374-4884; 1976-8524
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度
國別 KOR
公開徵稿
出版型式 紙本
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