新型薄膜式氮化鎵發光二極體之製程開發
學年 99
學期 2
出版（發表）日期 2011-05-01
作品名稱 新型薄膜式氮化鎵發光二極體之製程開發
作品名稱（其他語言） The Novel Fabrication Technique of Thin-Gan Light Emitting Diodes
著者 許世杰
單位 淡江大學化學工程與材料工程學系
描述 計畫編號：NSC100-2218-E032-001
 研究期間：20110501~20120731
 研究經費：796,000
委託單位 行政院國家科學委員會
摘要 This project aims at adopting the technique of mechanical lift-off to get rid of sapphire substrate, whose electric conductivity and thermal dissipation are not good enough, in order to produce new elements of thin-GaN LED. We could apply this technique on the one hand to replace the commonly used method of laser lift-off to achieve the production goal of low-cost, large-scale and acutely fast fabrication. On the other hand, we can further avoid the eternal damage of the surface of GaN thin film from laser with high energy when applying laser lift-off which will lead to the difficulty of subsequent process and the problems of lighting-efficiency reduction. In addition, this project will reach the objective of improving internal quantum efficiency by discussing various material characteristics of bonding metals and trying to decrease possible in-plane stress accompanied in processes. Therefore, we expect that this research can not only develop new fabrication technique of thin-GaN LED but also combine the technique of mechanical lift-off with businesses to provide the best option for future LED production. 此項研究計畫的重點乃是利用機械式剝離技術來去除導電性、散熱性均不佳的藍寶石基板，以製作新型薄膜式氮化鎵發光二極體元件。使用此技術取代目前常用的雷射剝離方法，達到低成本、大量且快速生產的製程目的，並進而避免在雷射剝離時，高能量的雷射對氮化鎵薄膜表面產生永久性的破壞，導致後續製程的困難和發光效率的降低等問題。此外，藉由探討不同薄膜式氮化鎵發光二極體元件金屬鍵合之材料特性，試著降低製程中伴隨而來的可能薄膜應力，並藉由調控薄膜應力來達到增進發光二極體元件內部量子效率的目的。故此一研究不僅能開發新的薄膜式氮化鎵發光二極體元件製程技術，更期望能利用此一技術與業界結合，提供未來氮化鎵發光二極體元件製程的最佳選擇。
關鍵字
語言 zh_TW
相關連結

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