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標題:Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
學年96
學期1
出版(發表)日期2008/01/01
作品名稱Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
作品名稱(其他語言)
著者Tsai, H. M.; Ray, S. C.; Pao, C. W.; Chiou, J. W.; Huang, C. L.; Du, C. H.; Pong, W. F.; Tsai, M.-H.; Fukano, A.; Oyanagi, H.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 103(1), pp.013704(4 pages)
摘要The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.
關鍵字bond lengths; high-k dielectric thin films; permittivity; photoelectron spectra; silicon compounds; valence bands; XANES
語言英文
ISSN0021-8979
期刊性質國外
收錄於SCI
產學合作
通訊作者Pong, W. F.
審稿制度
國別美國
公開徵稿
出版型式紙本
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