教師資料查詢 | 類別: 期刊論文 | 教師: 杜昭宏 Chao-hung Du (瀏覽個人網頁)

標題:Polarization-dependent electrolyte electroreflectance study of Cu2ZnSiS4 and Cu2ZnSiSe4 single crystals
學年
學期
出版(發表)日期2011/06/01
作品名稱Polarization-dependent electrolyte electroreflectance study of Cu2ZnSiS4 and Cu2ZnSiSe4 single crystals
作品名稱(其他語言)
著者Levcenco, S.; Dumcenco, D.; Huang, Y. S.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.; Du, C. H.
單位淡江大學物理學系
出版者Amsterdam: Elsevier BV
著錄名稱、卷期、頁數Journal of Alloys and Compounds 509(25), pp.7105–7108
摘要Polarization-dependent electrolyte electroreflectance (EER) measurements were carried out on the oriented Cu2ZnSiS4 and Cu2ZnSiSe4 single crystals at room temperature. Thin blade single crystals of Cu2ZnSiS4 and Cu2ZnSiSe4 were grown by chemical vapor transport technique using iodine as a transport agent. Laue pattern normal to the basal plane of the as-grown crystal revealed the formation of orthorhombic structure with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The polarized EER spectra in the vicinity of the direct band edge of Cu2ZnSiS4 displayed distinct structures associated with transitions from two upper-most valence bands to the conduction band minimum at Γ point. In the E⊥c configuration, the feature designated as EA ∼ 3.345 eV was detected and for Е‖c, only EB ∼ 3.432 eV appeared. For Cu2ZnSiSe4, three features denoted as EA, EB, and EC at around 2.348, 2.406 and 2.605 eV, respectively, were recorded for E⊥c polarization, whereas in the Е‖c, only EB and EC were the allowed transitions. Based on the experimental observations and a recent band-structure calculation by Chen et al. [Phys. Rev. B 82 (2010) 195203], plausible band structures near the direct band edge of Cu2ZnSiS4 and Cu2ZnSiSe4 have been proposed.
關鍵字Semiconductors; Optical properties; Optical spectroscopy
語言英文
ISSN0925-8388
期刊性質國外
收錄於SCI
產學合作
通訊作者Huang, Y. S.
審稿制度
國別荷蘭
公開徵稿
出版型式紙本
相關連結
SDGs
Google+ 推薦功能,讓全世界都能看到您的推薦!