| The operating mechanism of Schottky-gate nanosensors | |
|---|---|
| 學年 | 99 |
| 學期 | 2 |
| 發表日期 | 2011-06-21 |
| 作品名稱 | The operating mechanism of Schottky-gate nanosensors |
| 作品名稱（其他語言） | |
| 著者 | Lee, Yun-ju; Tung, Hsien-chin; Wu, Wen-wei; Yeh, Ping-hung |
| 作品所屬單位 | 淡江大學物理學系 |
| 出版者 | IEEE Electron Devices Society |
| 會議名稱 | 2011 IEEE 4th International Nanoelectronics Conference(INEC) |
| 會議地點 | Tao-Yuan, Taiwan |
| 摘要 | The highly sensitive nanowire-based Schottky-gate nanosensors for detecting UV, bio-molecules, and gas sensing were demonstrated. The operating mechanism of the Schottky-gate nanosensors is totally distinct from the conventional Ohmic contacted nanosensors. The Schottky-gated device (SGD) has a few merits in comparison to the conventional Ohmic contacted device (OCD). First, it needs no bio-probe to detect molecules; rather, it depends on the absorption of the charged molecules to the junction region. Second, as for the same type of nanowires, such as ZnO, the sensitivity of the SGD is much higher than that of OCD, because a few molecules at the junction region can change the “gate” that effectively tunes the conductance. This Schottky-gate-modulation based sensing principle can be applied to other materials and sensing systems. |
| 關鍵字 | Schottky contact;Zinc oxide;nanowire and sensor |
| 語言 | en |
| 收錄於 | |
| 會議性質 | 國際 |
| 校內研討會地點 | |
| 研討會時間 | 20110621~20110624 |
| 通訊作者 | |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | |
| 出處 | 2011 IEEE 4th International Nanoelectronics Conference(INEC), Tao-Yuan, Taiwan, 1, pp.29-32 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74862 ) |
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