Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
學年 99
學期 1
出版（發表）日期 2011-01-01
作品名稱 Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
作品名稱（其他語言）
著者 Chen, Sheng-Yu; Yeh, Ping-Hung; Wu, Wen-Wei; Chen, Uei-Shin; Chueh, Yu-Lun; Yang, Yu-Chen; Gwo, Shangir; Chen, Lih-Juann
單位 淡江大學物理學系
出版者 Washington, DC: American Chemical Society
著錄名稱、卷期、頁數 ACS Nano 5(11), pp.9202–9207
摘要 One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.
關鍵字 nickel silicide; nanowires; low resistivity; high aspect ratio; epitaxy; nanoelectronic devices
語言 en
ISSN 1936-0851; 1936-086X
期刊性質 國外
收錄於
產學合作
通訊作者 Chen, Lih-Juann; Wu, Wen-Wei
審稿制度
國別 USA
公開徵稿
出版型式 紙本
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