教師資料查詢 | 類別: 期刊論文 | 教師: 杜昭宏 Chao-hung Du (瀏覽個人網頁)

標題:Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance
學年
學期
出版(發表)日期2010/09/01
作品名稱Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance
作品名稱(其他語言)
著者Levcenco, S.; Dumcenco, D.; Huang, Y. S.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.; Du, C. H.
單位淡江大學物理學系
出版者Amsterdam: Elsevier BV
著錄名稱、卷期、頁數Journal of Alloys and Compounds 506(1), pp.46–50
摘要The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on the as-grown basal plane with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The PzR spectra revealed polarization-dependent and features for E⊥c and Е||c polarization, respectively. Both and features are associated with the interband excitonic transitions at Γ point and can be explained by crystal-field splitting of valence band. From a detailed lineshape fit to the PzR spectra, the temperature dependence of the transition energies and broadening parameters of the band-edge excitons were determined accurately. The temperature dependence of near band-edge excitonic transition energies were analyzed using Varshni and Bose–Einstein expressions. The temperature dependence of the broadening parameter of excitonic features also has been studied in terms of a Bose–Einstein equation that contains the electron (exciton)–longitudinal optical phonon-coupling constant. The parameters that describe the temperature variation of the excitonic transition energies and broadening parameters were evaluated and discussed.
關鍵字Semiconductors; Crystal growth; Optical properties; Optical spectroscopy
語言英文
ISSN0925-8388
期刊性質國外
收錄於SCI
產學合作
通訊作者Huang, Y. S.
審稿制度
國別荷蘭
公開徵稿
出版型式紙本
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