Modification on the Microstructure of Ultrananocrystalline Diamond Films for Enhancing Their Electron Field Emission Properties via a Two-Step Microwave Plasma Enhanced Chemical Vapor Deposition Process
學年 99
學期 2
出版（發表）日期 2011-07-21
作品名稱 Modification on the Microstructure of Ultrananocrystalline Diamond Films for Enhancing Their Electron Field Emission Properties via a Two-Step Microwave Plasma Enhanced Chemical Vapor Deposition Process
作品名稱（其他語言）
著者 Cheng, Hsiu-fung; Horng, Chuang-chi; Chiang, Horng-yi; Chen, Huang-chin; Lin, I-nan;
單位 淡江大學物理學系
出版者 Washington: American Chemical Society
著錄名稱、卷期、頁數 Journal of Physical Chemistry C 115(28), pp.13894-13900
摘要 The electron field emission (EFE) properties of microcrystalline diamond (MCD) films were markedly improved by using ultrananocrystalline diamond (UNCD) films as the nucleation layer. Thus formed MCD/UNCD composite films possess a low turn-on field ((E0)MCD/UNCD = 10.3 V/μm), which is even smaller than that for the underlying UNCD films ((E0)UNCD = 14.7 V/μm). However, the extent of the enhancement on EFE behavior of the MCD/UNCD films is strongly influenced by the characteristics of the UNCD nucleation layer. The improvement on EFE behavior of MCD/UNCD films is large when the UNCD nucleation layer was grown in H2-free Ar plasma (CH4/Ar/H2 (0%) = 2/98/0) and is small when the UNCD layer was grown in H2-containing Ar plasma (CH4/Ar/H2 (3%) = 2/95/3). Transmission electron microscopy (TEM) examinations reveal that, while both films contain large-grain and ultrasmall grain duplex microstructure, only the former contain nanographites, locating along the interface of large-grain and ultrasmall grain regions. Presumably, the nanographites form an interconnected path that improved the transport of electrons and markedly enhanced the EFE properties of the MCD/UNCD composite films.
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ISSN 1932-7447 1932-7455
期刊性質 國外
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產學合作
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審稿制度
國別 USA
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出版型式 紙本 電子版
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