| Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing | |
|---|---|
| 學年 | 93 |
| 學期 | 2 |
| 出版（發表）日期 | 2005-07-01 |
| 作品名稱 | Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing |
| 作品名稱（其他語言） | |
| 著者 | Yeh, P.H.; Yu, C.H.; Chen, L.J. |
| 單位 | 淡江大學物理學系 |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Nuclear Instruments and Methods in Physics Research Section B 237, pp.167-173 |
| 摘要 | The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV View the MathML source or As+ to a dose of 3 × 1015 ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on View the MathML source, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing. |
| 關鍵字 | Doping species effect;Metal-induced crystallization;Current-induced crystallization |
| 語言 | en |
| ISSN | 0168-583X 1872-9584 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | NLD |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72745 ) |
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