Effect of milling process on the microwave dielectric properties of Ba2Ti9O20 materials
學年 95
學期 1
出版（發表）日期 2006-09-01
作品名稱 Effect of milling process on the microwave dielectric properties of Ba2Ti9O20 materials
作品名稱（其他語言）
著者 Chang, Chi-Ben; Leou, Keh-Chyang; Chia, Chia-Ta; Cheng, Cheng-Sao; Chou, Chen-Chia; Lin, I-Nan
單位 淡江大學物理學系
出版者 Bristol: Institute of Physics Publishing Ltd.
著錄名稱、卷期、頁數 Journal of Physics D: Applied Physics 39(20), pp.4457–4465
摘要 The effects of the milling process on the characteristics of Ba2Ti9O20 materials were investigated. The chemical analyses using transmission electron microscopy (EDAX in TEM) revealed that the SiO2 species incorporated into the Ba2Ti9O20 materials were expelled by the Ba2Ti9O20 grains. It induced the dissociation of the Ba2Ti9O20 materials near the grain boundaries and degraded the microwave dielectric properties of the materials. The same phenomenon was assumed to be the procedure by which the high-energy-milling (HEM) process using Si3N4 grinding media (Si3N4-HEM) deleteriously influenced the microwave dielectric properties for the Ba2Ti9O20 materials. Utilizing the three-dimensional-milling (3DM) process in place of the Si3N4-HEM one markedly improved the characteristics of the Ba2Ti9O20 materials. The 3DM-processed samples own the same crystallinity as the HEM-processed ones but possess a pronouncedly more uniform microstructure and, therefore, exhibit a superior quality factor [(Q × f)3DM = 28 500 GHz and (Q × f)HEM = 21,900 GHz] with the same large dielectric constant (K = 38–39), when sintered at the same conditions (1350 °C/4 h). Such a phenomenon is ascribed to the fact that the 3DM process can pulverize the powders efficiently but induce no SiO2-contamination.
關鍵字
語言 en
ISSN 0022-3727 1361-6463
期刊性質
收錄於
產學合作
通訊作者
審稿制度
國別 GBR
公開徵稿
出版型式 紙本 電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72759 )

機構典藏連結