| Glycolic Acid in Hydrogen Peroxide-Based Slurry for Enhancing Copper Chemical Mechanical Polishing | |
|---|---|
| 學年 | 93 |
| 學期 | 2 |
| 出版（發表）日期 | 2005-05-01 |
| 作品名稱 | Glycolic Acid in Hydrogen Peroxide-Based Slurry for Enhancing Copper Chemical Mechanical Polishing |
| 作品名稱（其他語言） | |
| 著者 | Tsai, Tzu-hsuan; Wu,Y. F.; Yen, S. C. |
| 單位 | 淡江大學化學工程與材料工程學系 |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Microelectronic Engineering 77, pp.193-203 |
| 摘要 | The effects of glycolic acid (GCA) added into hydrogen peroxide (H2O2) or urea-hydrogen peroxide (U-H2O2) slurries on Cu-CMP performance were investigated. Experiments showed that GCA could prevent H2O2 or U-H2O2 from rapid decomposition and increase the active peroxide lifetime of the slurries. In addition, electrochemical studies from polarization and impedance experiments verified that copper removal efficiency could be enhanced by use of GCA. Meanwhile, a valid equivalent circuit for Cu-CMP system was proposed, and the fitting results provided a good index to surface planarization. Furthermore, GCA could shorten the range of isoelectric points between Cu film and α-Al2O3 abrasives. After a post cleaning, the particle contamination thus could be reduced due to the electrostatic repulsion. Our study proved that adding GCA into the U-H2O2 slurries with BTA could further improve the Cu-CMP performance. |
| 關鍵字 | Glycolic acid;Urea-hydrogen peroxide;Slurry;Copper;Chemical mechanical polishing |
| 語言 | en |
| ISSN | |
| 期刊性質 | 國外 |
| 收錄於 | SCI SSCI EI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/71766 ) |
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