Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process
學年 97
學期 2
出版（發表）日期 2009-04-01
作品名稱 Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process
作品名稱（其他語言）
著者 Dai, Ching-Liang; Lu, Po-Wei; Wu, Chyan-Chyi; Chang, Chienliu
單位 淡江大學機械與機電工程學系
出版者 Basel: MDPI AG
著錄名稱、卷期、頁數 Sensors 9(11), pp.8748-8760
摘要 In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an antenna. The oscillator is adopted to generate an ac signal, and the amplifier is used to amplify the sensing signal of the pressure sensor. The antenna is utilized to transmit the output voltage of the pressure sensor to a receiver. The pressure sensor is constructed by 16 sensing cells in parallel. Each sensing cell contains an MOS (metal oxide semiconductor) and a suspended membrane, which the gate of the MOS is the suspended membrane. The postprocess employs etchants to etch the sacrificial layers in the pressure sensor for releasing the suspended membranes, and a LPCVD (low pressure chemical vapor deposition) parylene is adopted to seal the etch holes in the pressure. Experimental results show that the pressure sensor has a sensitivity of 0.08 mV/kPa in the pressure range of 0–500 kPa and a wireless transmission distance of 10 cm.
關鍵字 wireless micro pressure sensor; CMOS-MEMS; oscillators
語言 en
ISSN 1424-8220 1424-8239
期刊性質 國外
收錄於 SCI
產學合作
通訊作者 Dai, Ching-Liang
審稿制度
國別 CHE
公開徵稿
出版型式 電子版
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