Design and fabrication of RF MEMS switch by CMOS process
學年 93
學期 2
出版（發表）日期 2005-04-01
作品名稱 Design and fabrication of RF MEMS switch by CMOS process
作品名稱（其他語言）
著者 Wu, C.C.
單位 淡江大學機械與機電工程學系
出版者
著錄名稱、卷期、頁數 Tamkang Journal of Science and Engineering8(3), pp.197-202
摘要 This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively.
關鍵字 CMOS;Post-process;MEMS;RF Switch
語言 en
ISSN
期刊性質 國內
收錄於
產學合作
通訊作者
審稿制度 否
國別 TWN
公開徵稿
出版型式 ,電子版
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機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65291 )

機構典藏連結
SDGS 優質教育,尊嚴就業與經濟發展,產業創新與基礎設施